NCV7707DQR2G datasheet(7/38 Pages) ONSEMI

Part #	NCV7707DQR2G

Description	Door-Module Driver-IC

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Manufacturer	ONSEMI [ON Semiconductor]

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NCV7707

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7

ELECTRICAL CHARACTERISTICS (continued)

4.5 V < VCC < 5.25 V, 8 V < Vs < 18 V, −40°C < TJ < 150°C; unless otherwise noted.

Symbol

Unit

Max

Typ

Min

Test Conditions

Parameter

MIRROR COMMON OUTPUT (X/Y, FOLD) OUT1

Ron_out1

On−resistance HS or LS

TJ = 25°C, Iout1 = ±1.5 A

0.3

W

TJ = 125°C, Iout1 = ±1.5 A

0.6

Ioc1_hs

Overcurrent threshold HS

−5

−3

A

Ioc1_ls

Overcurrent threshold LS

3

5

A

Vlim1

Vds voltage limitation HS

or LS

2

3

V

Iuld1_hs

Underload detection

threshold HS

−80

−5

mA

Iuld1_ls

Underload detection

threshold LS

10

80

mA

td_HS1(on)

Output delay time, HS

Driver on

Time from CSB going high to

V(OUT1) = 0.1

·Vs / 0.9·Vs (on/off)

2.5

12

ms

td_HS1(off)

Output delay time, HS

Driver off

3

12

ms

td_LS1(on)

Output delay time, LS

Driver on

Time from CSB going low to

V(OUT1) = 0.9

·Vs / 0.1·Vs (on/off)

1

12

ms

td_LS1(off)

Output delay time, LS

Driver off

1.5

12

ms

tdLH1

Cross conduction

protection time,

low−to−high transition

including LS slew−rate

0.5

22

ms

tdHL1

Cross conduction

protection time,

high−to−low transition

including HS slew−rate

5.5

22

ms

Ileak_act_hs1

Output HS leakage current,

Active mode

V(OUT1) = 0 V

−40

−16

mA

Ileak_act_ls1

Output pull−down current,

Active mode

V(OUT1) = VS

100

160

mA

Ileak_stdby_hs1

Output HS leakage current,

Standby mode

V(OUT1) = 0 V

−5

mA

Ileak_stdby_ls1

Output pull−down current,

Standby mode

V(OUT1) = VS, TJ w 25°C

V(OUT1) = VS, TJ < 25°C

80

120

175

mA

td_uld1

Underload blanking delay

430

3000

ms

td_old1

Overload shutdown

blanking delay

5

25

ms

frec1L

Recovery frequency, slow

recovery mode

CONTROL_3.OCRF = 0

1

4

kHz

frec1H

Recovery frequency, fast

recovery mode

CONTROL_3.OCRF = 1

2

6

kHz

dVout1

Slew rate of HS driver

Vs = 13.5 V, Rload = 16

W to GND

1

2

3

V/

ms

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