 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MXP1158 Datasheet(PDF) 1 Page - Microsemi Corporation |
|
||||||||||||||||||||||||||||||
MXP1158 Datasheet(HTML) 1 Page - Microsemi Corporation |
|
|
1 / 1 page 
Opto Products 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Data Sheet # MSC1334.PDF Updated: September 1999 MXP 1158 Electrical Characteristics @ 25oC Features • 2,500 Volt electrical isolation • Standard 8-pin DIP package • High current transfer ratio for low IF • Screening similar to JANTX, JANTXV or JANS equivalent Description • The MXP1158 consists of a light emitting diode and an NPN phototransistor. • The device is available in a hermetic 8-pin DIP package. Phototransistor Optocoupler LED Input Diode 2 3 5 6 NC Absolute Maximum Ratings SYMBOL CHARCTERISTIC CONDITIONS Min Max UNITS IC(on) On-State Collector Current IF = 1 mA, VCE = 5 Volts 1.0 8.0 mAmps VCEsat Saturation Voltage IF = 2 mA, IC = 1.0 mA 0.3 Volts BVceo Breakdown Voltage IC = 1.0 mA 40 Volts BVebo Breakdown Voltage Ieb = 100 uA 7 Volts ICE(off) Off-State Leakage Current VC = 20 Volts 100 nAmps VF Input Forward Voltage IF = 10 mA 1.0 Volts IR Input Reverse Current VR = 2.0 V 100.0 uAmps tR Rise Time VCC = 10 Volts, RL = 100 Ohms 20 usec tF Fall Time IF = 5 mA 20 usec 1 2 3 4 7 8 5 6 Reverse Voltage 2.0 Vdc minimum @ IR = 10 uA Forward Voltage 1.95 Vdc maximum @ IF = 100 mA Peak Forward Current 1.0 Amp @ 1 msec pulse width Power Dissipation 200 mW Input to Output Isolation +/- 2,500 Vdc Storage Temperature Range -65 C to +150 C Operating Temperature Range -55 C to +125 C |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
