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MXP1158 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. MXP1158
Description  Phototransistor Optocoupler
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MXP1158 Datasheet(HTML) 1 Page - Microsemi Corporation

  MXP1158 Datasheet HTML 1Page - Microsemi Corporation  
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Opto
Products
2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
Data Sheet # MSC1334.PDF
Updated: September 1999
MXP 1158
Electrical Characteristics @ 25oC
Features
2,500 Volt electrical isolation
Standard 8-pin DIP package
High current transfer ratio for low IF
Screening similar to JANTX, JANTXV or
JANS equivalent
Description
The MXP1158 consists of a light emitting diode and an NPN phototransistor.
The device is available in a hermetic 8-pin DIP package.
Phototransistor Optocoupler
LED Input Diode
2
3
5
6
NC
Absolute Maximum Ratings
SYMBOL
CHARCTERISTIC
CONDITIONS
Min
Max
UNITS
IC(on)
On-State Collector Current
IF = 1 mA, VCE = 5 Volts
1.0
8.0
mAmps
VCEsat
Saturation Voltage
IF = 2 mA, IC = 1.0 mA
0.3
Volts
BVceo
Breakdown Voltage
IC = 1.0 mA
40
Volts
BVebo
Breakdown Voltage
Ieb = 100 uA
7
Volts
ICE(off)
Off-State Leakage Current
VC = 20 Volts
100
nAmps
VF
Input Forward Voltage
IF = 10 mA
1.0
Volts
IR
Input Reverse Current
VR = 2.0 V
100.0
uAmps
tR
Rise Time
VCC = 10 Volts, RL = 100 Ohms
20
usec
tF
Fall Time
IF = 5 mA
20
usec
1
2
3
4
7
8
5
6
Reverse Voltage
2.0 Vdc minimum @ IR = 10 uA
Forward Voltage
1.95 Vdc maximum @ IF = 100 mA
Peak Forward Current
1.0 Amp @ 1 msec pulse width
Power Dissipation
200 mW
Input to Output Isolation
+/- 2,500 Vdc
Storage Temperature Range
-65 C to +150 C
Operating Temperature Range
-55 C to +125 C


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