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V20200C Datasheet(PDF) 3 Page - Vishay Siliconix

Part # V20200C
Description  Dual High Voltage Trench MOS Barrier Schottky Rectifier
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

V20200C Datasheet(HTML) 3 Page - Vishay Siliconix

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V20200C, VF20200C, VB20200C, VI20200C
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
3
Document Number: 89072
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Instantaneous Forward Voltage (V)
T
A = 100 °C
0.0001
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
T
A = 100 °C
0.001
10
100
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
1
10
0.01
0.1
1
10
100
t - Pulse Duration (s)
Junction to Case
V20200C
1
10
0.01
0.1
1
10
100
t - Pulse Duration (s)
Junction to Case
VF20200C


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