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NCV890200PDR2G Datasheet(PDF) 6 Page - ON Semiconductor |
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NCV890200PDR2G Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 18 page NCV890200 www.onsemi.com 6 ELECTRICAL CHARACTERISTICS (VIN = 4.5 V to 28 V, VEN = 5 V, VBST = VSW + 3.0 V, CDRV = 0.1 mF, Min/Max values are valid for the temperature range −40 °C ≤ TJ ≤ 150°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.) Parameter Unit Max Typ Min Conditions Symbol POWER SWITCH ON Resistance RDSON VBST = VSW + 3.0 V 650 m W Leakage current VIN to SW ILKSW VEN = 0 V, VSW = 0, VIN = 18 V 10 mA Minimum ON Time tONMIN Measured at SW pin 45 70 ns Minimum OFF Time tOFFMIN Measured at SW pin At FSW = 2 MHz (normal) At FSW = 500 kHz (max duty cycle) 30 30 50 70 ns PEAK CURRENT LIMIT Current Limit Threshold ILIM 2.2 2.45 2.7 A SHORT CIRCUIT FREQUENCY FOLDBACK Lowest Foldback Frequency Lowest Foldback Frequency − High Vin Hiccup Mode FSWAF FSWAFHV FSWHIC VFB = 0 V, 4.5 V < VIN < 18 V VFB = 0 V, 20 V < VIN < 28 V VFB = 0 V 400 200 24 500 250 32 600 300 40 kHz GATE VOLTAGE SUPPLY (DRV pin) Output Voltage VDRV 3.1 3.3 3.5 V DRV POR Start Threshold VDRVSTT 2.7 2.9 3.05 V DRV POR Stop Threshold VDRVSTP 2.5 2.8 3.0 V DRV Current Limit IDRVLIM VDRV = 0 V 16 45 mA OUTPUT PRECHARGE DETECTOR Threshold Voltage VSSEN 20 35 50 mV THERMAL SHUTDOWN Activation Temperature (Note 1) TSD 150 190 °C Hysteresis (Note 1) THYS 5 20 °C 1. Not tested in production. Limits are guaranteed by design. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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