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MRF5812 Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. MRF5812
Description  RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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MRF5812 Datasheet(HTML) 2 Page - Microsemi Corporation

   
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MSC1319.PDF 10-25-99
MRF5812, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25
°C)
STATIC
(off)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
15
-
-
Vdc
BVCBO
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
30
-
-
Vdc
BVEBO
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
2.5
-
-
Vdc
ICBO
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
IEBO
Collector Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
50
200
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
COB
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
1.4
2.0
pF
Ftau
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
-
5.0
-
GHz


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