SSF7509

75V N-Channel MOSFET

www.goodark.com

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Rev.3.5

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

80

70

320

A

200

W

Linear Derating Factor

2.0

W/°C

Drain-Source Voltage

75

V

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy @ L=0.3mH

375

mJ

Avalanche Current @ L=0.3mH

50

A

Operating Junction and Storage Temperature Range

-55 to + 175

°C

75V

6.5mohm(typ.)

80A

TO-220

Marking and Pin

Assignment

Schematic Diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



175℃ operating temperature



Lead free product

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.