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Rev.1.0

SSF2314

20V N-Channel MOSFET

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

0.5

0.65

1.2

V

Drain-Source On-State Resistance

33

40

mΩ

27

33

mΩ

Forward Transconductance

10

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

500

PF

Output Capacitance

300

PF

Reverse Transfer Capacitance

F=1.0MHz

140

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

20

40

nS

Turn-on Rise Time

18

40

nS

Turn-Off Delay Time

60

108

nS

Turn-Off Fall Time

28

56

nS

Total Gate Charge

10

15

nC

Gate-Source Charge

2.3

nC

Gate-Drain Charge

2.9

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

1.2

V

Diode Forward Current (Note 2)

1

A

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.