ENN8223A datasheet(2/8 Pages) ONSEMI

Part #	ENN8223A

Description	Bipolar Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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CPH5541

No.8223-2/8

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=(--)30V, IE=0A

(--)100

nA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0A

(--)100

nA

DC Current Gain

hFE

VCE=(--)2V, IC=(--10)50mA

(200)300

(500)800

Gain-Bandwidth Product

fT

VCE=(--)2V, IC=(--)50mA

(520)540

MHz

Output Capacitance

Cob

VCB=(--)10V, f=1MHz

(4.7)3.3

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(--)200mA, IB=(--)10mA

(--110)85

(--220)190

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=(--)200mA, IB=(--)10mA

(--)0.9

(--)1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(--)10μA, IE=0A

(--30)40

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(--)1mA, RBE=∞

(--)30

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=(--)10μA, IC=0A

(--)5

V

Turn-On Time

ton

See speciﬁed Test Circuit.

35

ns

Storage Time

tstg

(125)255

ns

Fall Time

tf

(25)40

ns

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

CPH5541-TL-E

CPH5

3,000pcs./reel

Pb Free

VR

RB

VCC=12V

VBE= --5V

+

50Ω

INPUT

OUTPUT

RL

220μF

470μF

PW=20μs

IB1

D.C.≤1%

IB2

20IB1= --20IB2=IC=300mA

For PNP, minus sign is omitted.

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