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EN6307C Datasheet(PDF) 2 Page - ON Semiconductor

Part No. EN6307C
Description  Bipolar Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

EN6307C Datasheet(HTML) 2 Page - ON Semiconductor

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2SA2013 / 2SC5566
No.6307-2/8
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Current
IC
(--)4
A
Collector Current (Pulse)
ICP
(--)7
A
Base Current
IB
(--)600
mA
Collector Dissipation
PC
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
μA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(360)400
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(24)15
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=(--)1A, IB=(--)50mA
(--105)85
(--180)130
mV
VCE(sat)2
IC=(--)2A, IB=(--)100mA
(--200)150
(--340)225
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)100mA
(--)0.89
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=(--)100μA, RBE=0Ω
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-ON Time
ton
See specified Test Circuit.
(30)35
ns
Storage Time
tstg
(230)300
ns
Fall Time
tf
(15)20
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA2013-TD-E
PCP
1,000pcs./reel
Pb Free
2SC5566-TD-E
PCP
1,000pcs./reel
VR10
RB
VCC=25V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
25
Ω
100
μF
470
μF
PW=20
μs
IB1
D.C.
≤1%
IB2
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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