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EN6307C Datasheet(PDF) 2 Page - ON Semiconductor |
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EN6307C Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page  2SA2013 / 2SC5566 No.6307-2/8 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current IC (--)4 A Collector Current (Pulse) ICP (--)7 A Base Current IB (--)600 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1 μA DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 560 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA (360)400 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (24)15 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=(--)1A, IB=(--)50mA (--105)85 (--180)130 mV VCE(sat)2 IC=(--)2A, IB=(--)100mA (--200)150 (--340)225 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)100mA (--)0.89 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100μA, RBE=0Ω (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V Turn-ON Time ton See specified Test Circuit. (30)35 ns Storage Time tstg (230)300 ns Fall Time tf (15)20 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA2013-TD-E PCP 1,000pcs./reel Pb Free 2SC5566-TD-E PCP 1,000pcs./reel VR10 RB VCC=25V VBE= --5V + + 50 Ω INPUT OUTPUT RL 25 Ω 100 μF 470 μF PW=20 μs IB1 D.C. ≤1% IB2 IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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