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MBR10HXX Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. MBR10HXX
Description  High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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MBR10HXX Datasheet(HTML) 1 Page - Vishay Siliconix

   
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MBR10Hxx, MBRF10Hxx, MBRB10Hxx
www.vishay.com
Vishay General Semiconductor
Revision: 28-Jul-15
1
Document Number: 88667
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V to 100 V
IFSM
250 A
VF
0.64 V
IR
4.5 μA
TJ max.
175 °C
Package
TO-220AC, ITO-220AC, TO-263AB
Diode variations
Single
PIN 2
PIN 1
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
MBR10H90
MBR10H100
ITO-220AC
MBRF10H90
MBRF10H100
MBRB10H90
MBRB10H100
PIN 1
K
PIN 2
HEATSINK
1
2
1
2
K
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H90
MBR10H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
Maximum DC blocking voltage
VDC
90
100
Maximum average forward rectified current
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
250
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
IRRM
0.5
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
VAC
1500
V


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