BFR90 datasheet(1/5 Pages) MICROSEMI

Part #	BFR90

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Manufacturer	MICROSEMI [Microsemi Corporation]

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MSC1307.PDF 10-25-99

BFR90

DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in

applications requiring fast switching times.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

15

Vdc

VCBO

Collector-Base Voltage

20

Vdc

VEBO

Emitter-Base Voltage

3.0

Vdc

IC

Collector Current

30

mA

Thermal Data

P

D

Total Device Dissipation @ TA = 60ºC

Derate above 60ºC

180

2.0

mWatts

mW/ ºC

Macro T

(STYLE #2)

Features

•

High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA

•

Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz

•

High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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