NVMFS4841NT3G datasheet(4/6 Pages) ONSEMI

Part #	NVMFS4841NT3G

Description	Power MOSFET

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NVMFS4841N

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4

TYPICAL PERFORMANCE CURVES

Crss

10

0

10

15

30

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

2000

0

VGS

VDS

55

TJ = 25°C

Ciss

Coss

Crss

Ciss

Figure 8. Gate−To−Source and Drain−To−Source

Voltage vs. Total Charge

0

2

0

QG, TOTAL GATE CHARGE (nC)

1

4

8

VDD = 15 V

VGS = 10 V

ID = 30 A

TJ = 25°C

QT

10

0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

RG, GATE RESISTANCE (W)

1

10

100

1000

1

VGS = 0 V

Figure 10. Diode Forward Voltage vs. Current

100

0.6

0.7

5

10

15

tr

td(off)

td(on)

tf

10

VDD = 15 V

ID = 15 A

VGS = 10 V

0.8

0.9

20

30

25

TJ = 25°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

1

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1000

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

1 ms

100 ms

10 ms

dc

10 ms

20

1

100

0

25

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID = 19 A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

50

75

20

60

80

100

125

100

180

175

1000

40

25

2200

1800

1600

1400

1200

200

800

600

400

0.5

1.0

120

3

4

26

16

14

26

12

QGS

140

160

12

QGD

18 20 22

11

10

9

8

7

6

5

24

150

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NVMFS4841NT3G Datasheet(PDF) 4 Page - ON Semiconductor

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