SZMMBZ16VTALT1G datasheet(3/7 Pages) ONSEMI

Part #	SZMMBZ16VTALT1G

Description	40 Watt Peak Power Zener Transient Voltage Suppressors

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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MMBZ16V, SZMMBZ16V

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

QVBR

Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

Uni−Directional TVS

IPP

IF

V

I

IR

IT

VRWM

VC VBR

VF

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)

(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS

Device*

Device

Marking

VRWM

IR @

VRWM

Breakdown Voltage

VC @ IPP (Note 5)

QVBR

VBR (Note 4) (V)

@ IT

VC

IPP

Volts

nA

Min

Nom

Max

mA

V

A

mV/

5C

MMBZ16VALT1G

16A

13

50

15.20

16

16.80

1.0

23

1.7

13.8

(VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS

Device*

Device

Marking

VRWM

IR @

VRWM

Breakdown Voltage

VC @ IPP (Note 5)

QVBR

VBR (Note 4) (V)

@ IT

VC

IPP

Volts

nA

Min

Nom

Max

mA

V

A

mV/

5C

MMBZ16VTALT1G

16T

13

50

15.68

16

16.32

1.0

23

1.7

13.8

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. VBR measured at pulse test current IT at an ambient temperature of 25°C.

5. Surge current waveform per Figure 5 and derate per Figure 6

* Include SZ-prefix devices where applicable.

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SZMMBZ16VTALT1G Datasheet(PDF) 3 Page - ON Semiconductor

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