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SZMMBZ16VTALT1G Datasheet(PDF) 3 Page - ON Semiconductor |
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SZMMBZ16VTALT1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page MMBZ16V, SZMMBZ16V http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current QVBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS Device* Device Marking VRWM IR @ VRWM Breakdown Voltage VC @ IPP (Note 5) QVBR VBR (Note 4) (V) @ IT VC IPP Volts nA Min Nom Max mA V A mV/ 5C MMBZ16VALT1G 16A 13 50 15.20 16 16.80 1.0 23 1.7 13.8 (VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS Device* Device Marking VRWM IR @ VRWM Breakdown Voltage VC @ IPP (Note 5) QVBR VBR (Note 4) (V) @ IT VC IPP Volts nA Min Nom Max mA V A mV/ 5C MMBZ16VTALT1G 16T 13 50 15.68 16 16.32 1.0 23 1.7 13.8 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. Surge current waveform per Figure 5 and derate per Figure 6 * Include SZ-prefix devices where applicable. |
Similar Part No. - SZMMBZ16VTALT1G |
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Similar Description - SZMMBZ16VTALT1G |
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