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SSF5NS65UD Datasheet(PDF) 1 Page - GOOD-ARK Electronics |
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SSF5NS65UD Datasheet(HTML) 1 Page - GOOD-ARK Electronics |
1 / 7 page SSF5NS65UD 650V N-Channel MOSFET www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits Description Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5 ① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.2 ① IDM Pulsed Drain Current ② 15 A Power Dissipation ③ 50 W PD @TC = 25°C Linear Derating Factor 0.4 W/°C VDS Drain-Source Voltage 650 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.4mH 54 mJ IAR Avalanche Current @ L=22.4mH 2.2 A TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C VDSS 650V RDS(on) 0.74Ω (typ.) ID 5A ① TO-252 (DPAK) Marking and Pin Assignment Schematic Diagram High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product The SSF5NS65UD series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving. |
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Similar Description - SSF5NS65UD_15 |
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