SSF5NS65UD_15 datasheet(1/7 Pages) GOOD-ARK

Part #	SSF5NS65UD

Description	650V N-Channel MOSFET

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Manufacturer	GOOD-ARK [GOOD-ARK Electronics]

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SSF5NS65UD

650V N-Channel MOSFET

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Rev.1.0

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

5 ①

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

3.2 ①

IDM

Pulsed Drain Current ②

15

A

Power Dissipation ③

50

W

PD @TC = 25°C

Linear Derating Factor

0.4

W/°C

VDS

Drain-Source Voltage

650

V

VGS

Gate-to-Source Voltage

± 30

V

EAS

Single Pulse Avalanche Energy @ L=22.4mH

54

mJ

IAR

Avalanche Current @ L=22.4mH

2.2

A

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

VDSS

650V

RDS(on)

0.74Ω (typ.)

ID

5A ①

TO-252 (DPAK)

Marking and Pin

Assignment

Schematic Diagram



High dv/dt and avalanche capabilities



100% avalanche tested



Low input capacitance and gate charge



Low gate input resistance



Lead free product

The SSF5NS65UD series MOSFETs is a new technology, which combines an innovative super

junction technology and advance process. This new technology achieves low RDS(ON), energy saving,

high reliability and uniformity, superior power density and space saving.

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SSF5NS65UD Datasheet(PDF) 1 Page - GOOD-ARK Electronics

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