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SSF5NS70UG Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SSF5NS70UG Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 7 page  SSF5NS70UG 700V N-Channel MOSFET www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 4.4 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 700 — — V VGS = 0V, ID = 250μA — 1.1 1.25 VGS=10V,ID = 1A — 2.3 — Ω TJ = 125°C — 1.25 1.4 VGS=10V,ID = 2.8A RDS(on) Static Drain-to-Source on-resistance — 2.6 — Ω TJ = 125°C 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 2.1 — V TJ = 125°C — — 1 VDS =700V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125°C — — 100 VGS =30V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -30V Qg Total gate charge — 9.7 — Qgs Gate-to-Source charge — 1.9 — Qgd Gate-to-Drain("Miller") charge — 2.3 — nC ID = 5A, VDS=200V, VGS = 10V td(on) Turn-on delay time — 8.7 — tr Rise time — 5.5 — td(off) Turn-Off delay time — 22 — tf Fall time — 13 — ns VGS=10V, VDS =400V, RGEN=10.2Ω,ID =1.5A Ciss Input capacitance — 344 — Coss Output capacitance — 17 — Crss Reverse transfer capacitance — 2.7 — pF VGS = 0V VDS = 100V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 5 ① A ISM Pulsed Source Current (Body Diode) — — 15 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.79 1.2 V IS=2.8A, VGS=0V trr Reverse Recovery Time — 92 — nS Qrr Reverse Recovery Charge — 410 — nC TJ = 25°C, IF = 1.5A, di/dt = 100A/μs |
Similar Part No. - SSF5NS70UG_15 |
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Similar Description - SSF5NS70UG_15 |
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