2N3420 datasheet(2/3 Pages) MICROSEMI

Part #	2N3420

Description	3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS

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Manufacturer	MICROSEMI [Microsemi Corporation]

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MSC0982A.DOC 12-02-98

2N3420

ELECTRICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS::

(25

°°Case Temperature Unless Otherwise Noted)

VALUE

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Min.

Max.

Units

BVCEO*

Collector-Emitter

Breakdown Voltage

IC = 50 mAdc, Cond. D (Note 1)

60

----

Vdc

ICEX*

Collector-Emitter

Cutoff Current

VEB = 0.5 Vdc, Cond. A, VCE = 80 Vdc

VEB = 0.5 Vdc, Cond. A, TA = 150°°C, VCE = 80 Vdc

----

0.3

50

µAdc

ICEO*

Collector-Emitter

Cutoff Current

VCE = 45 Vdc, Cond. D

----

5.0

µAdc

IEBO*

Emitter-Base

Cutoff Current

VEB = 6 Vdc, Cond. D

VEB = 8 Vdc, Cond. D

----

0.5

10

µAdc

hFE*

D.C. Current Gain

(Note 1)

IC = 100 mAdc, VCE = 2 Vdc

IC = 1 Adc, VCE = 2 Vdc

IC = 2 Adc, VCE = 2 Vdc

IC = 5 Adc, VCE = 5 Vdc

IC = 1 Adc, VCE = 2 Vdc, TA = - 55°°C

40

30

15

10

----

120

----

VCE(sat)*

Collector-Emitter

Saturation Voltage

(Note 1)

IC = 1 Adc, IB = 0.1 Adc

IC = 2 Adc, IB = 0.2 Adc

----

0.25

0.5

Vdc

VBE(sat)*

Base-Emitter Saturation

Voltage (Note 1)

IC = 1 Adc, IB = 0.1 Adc

IC = 2 Adc, IB = 0.2 Adc

0.6

0.7

1.2

1.4

Vdc

IS/b*

Forward Biased Second

Breakdown

VCE = 5 Vdc, TC = 100°°C

VCE = 37 Vdc, TC = 100°°C

VCE = 60 Vdc, TC = 100°°C

3

0.4

185

----

Adc

mAdc

ES/b*

Unclamped Reverse

Biased Second

Breakdown

IC = 3 Adc, L = 10 mH, Base Open

45

----

mj

ES/b*

Clamped Reverse Biased

Second Breakdown

IC = 3 Adc, L = 40 mH, VClamp = 125V

180

----

mj

fT*

Gain Bandwidth Product

IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz

26

160

MHz

COb*

Output Capacitance

VCB = 10 Vdc, IE = 0, f = 1 MHz

----

150

pf

ton

Turn-on Time

IC = 1 Adc, IB1 = - IB2 = 0.1 Adc

----

0.3

µµs

toff

Turn-off Time

IC = 1 Adc, IB1 = - IB2 = 0.1 Adc

----

1.2

µµs

Note 1: Pulse Test: Pulse width = 300

µµSec., duty cycle ≤≤ 2%.

* Indicates MIL-S-19500/393

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