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1N6818 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 1N6818
Description  LOW VOLTAGE DROP SCHOTTKY DIODE
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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1N6818 Datasheet(HTML) 1 Page - Microsemi Corporation

   
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PRELIMINARY
1N6818
(MSASC75H45F)
1N6818R
(MSASC75H45FR)
45 Volts
75 Amps
Features
• Tungsten/Platinum schottky barrier for very low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
Very low thermal resistance
Available as standard polarity (strap is anode: 1N6818) and reverse
polarity (strap is cathode: 1N6818R)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
45
Volts
Working Peak Reverse Voltage
VRWM
45
Volts
DC Blocking Voltage
VR
45
Volts
Average Rectified Forward Current, Tc
≤125°C
IF(ave)
75
Amps
derating, forward current, Tc
≥ 125°C
dIF/dT
4
Amps/
°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
IFSM
500
Amps
Peak Repetitive Reverse Surge Current, tp= 1
µs, f= 1kHz
IRRM
2
Amp
Junction Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Thermal Resistance, Junction to Case:
1N6818
1N6818R
θ
JC
0.50
0.65
°C/W
Maximum Ratings @ 25
°C (unless otherwise specified)
Mechanical Outline
ThinKey™ 4
Datasheet# MSC1029A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW VOLTAGE
DROP SCHOTTKY
DIODE


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