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1N6815 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 1N6815
Description  LOW VOLTAGE DROP SCHOTTKY DIODE
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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1N6815 Datasheet(HTML) 1 Page - Microsemi Corporation

   
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1N6815
(MSASC25H45K)
1N6815R
(MSASC25H45KR)
45 Volts
25 Amps
Features
• Tungsten/Platinum schottky barrier for very low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
Very low thermal resistance
Available as standard polarity (strap is anode: 1N6815) and reverse
polarity (strap is cathode: 1N6815R)
TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening
i.a.w. Microsemi Internal Procedure PS11.50 available
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
45
Volts
Working Peak Reverse Voltage
VRWM
45
Volts
DC Blocking Voltage
VR
45
Volts
Average Rectified Forward Current, Tc
≤ 145°C
IF(ave)
25
Amps
derating, forward current, Tc
≥ 145°C
dIF/dT
(3.3)
Amps/
°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
IFSM
125
Amps
Peak Repetitive Reverse Surge Current, tp= 1
µs, f= 1kHz
IRRM
2
Amp
Junction Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Thermal Resistance, Junction to Case:
1N6815
1N6815R
θJC
1.25
1.35
°C/W
Maximum Ratings @ 25
°°°°C (unless otherwise specified)
Mechanical Outline
ThinKey™2
Datasheet# MSC1458A August, 2000
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW VOLTAGE
DROP SCHOTTKY
DIODE


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