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1N6510 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 1N6510
Description  MONOLITHIC AIR ISOLATED DIODE ARRAY
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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1N6510 Datasheet(HTML) 1 Page - Microsemi Corporation

   
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A Microsemi Company
580 Pleasant St.
Phone: 617-924-9280
Watertown, MA 02472
Fax:
617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
HERMETIC CERAMIC PACKAGE
Bv > 75V at 5uA
Ir < 100nA at 40V
C < 4.0 pF
Symbol
Parameter
Limit
Unit
VBR(R)*1 *2 Reverse Breakdown Voltage
75
Vdc
IO
*1 * 3
Continuous Forward Current
300
mAdc
IFSM
*1
Peak Surge Current (tp= 1/120 s)
500
mAdc
PT1
*4
Power Dissipation per Junction @ 25°C
400
mW
PT2
*4
Power Dissipation per Package @ 25°C
500
mW
Top
Operating Junction Temperature Range
-65 to +150 °C
Tstg
Storage Temperature Range
-65 to +200 °C
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
Symbol Parameter
Conditions
Min
Max
Unit
Vf1
Forward Voltage
If = 100mAdc *1
1
Vdc
IR1
Reverse Current
VR = 40 Vdc
0.1
uAdc
IR2
Reverse Current
VR = 20 Vdc
25
nAdc
Ct
Capacitance (pin to pin)
VR = Vdc ; f = 1 MHz
4.0
pF
tfr
Forward Recovery Time
If = 100mAdc
15
ns
trr
Reverse Recovery Time
If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
10
ns
VF5
Forward Voltage Match
If = 10 mA
5
mV
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1021.PDF Rev - 11/25/98
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
1N6510
PACKAGE OUTLINE
1
2
3
4
5
6
7
14
13
12
11
10
9
8
15
16
.400
.370
.020
MAX
.015
MAX
.050
BSC
.019
.015
.085
.060
.015
MAX
.040
.025
.370
.250
.370
.250
.260
.245
.008
.003
Absolute Maximum Ratings:


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