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1N6508 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 1N6508
Description  MONOLITHIC AIR ISOLATED DIODE ARRAY
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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1N6508 Datasheet(HTML) 1 Page - Microsemi Corporation

   
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A Microsemi Company
580 Pleasant St.
Phone: 617-924-9280
Watertown, MA 02472
Fax:
617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
HERMETIC CERAMIC PACKAGE
Bv > 60V at 10uA
Ir < 100nA at 40V
C < 8.0 pF
Absolute Maximum Ratings:
Symbol
Parameter
Limit
Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
60
Vdc
IO
*1 * 3
Continuous Forward Current
300
mAdc
IFSM
*1
Peak Surge Current (tp= 1/120 s)
500
mAdc
PT1
*4
Power Dissipation per Junction @ 25°C
400
mW
PT2
*4
Power Dissipation per Package @ 25°C
600
mW
Top
Operating Junction Temperature Range
-65 to +150 °C
Tstg
Storage Temperature Range
-65 to +200 °C
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
Symbol Parameter
Conditions
Min
Max
Unit
Vf1
Forward Voltage
If = 100mAdc *1
1
Vdc
Vf2
Forward Voltage
If = 500mAdc *1
1.5
Vdc
IR1
Reverse Current
VR = 40 Vdc
0.1
uAdc
Ct
Capacitance (pin to pin)
VR = 0 Vdc ; f = 1 MHz
8.0
pF
tfr
Forward Recovery Time
If = 500mAdc
40
ns
trr
Reverse Recovery Time
If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms
20
ns
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1019.PDF Rev - 11/25/98
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
1N6508
PACKAGE OUTLINE
1
2
14
3
5
7
8
9
11
12
4
6
10
13
NOT CONNECTED
.200
.125
.060
.015
.023
.014
.070
.030
.100
BSC
.200
MAX
.310
.220
.320
.290
.785
MAX
.005
MIN
.098
MAX
O-15
.015
.008


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