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LM5035 Datasheet(PDF) 18 Page - Texas Instruments |
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LM5035 Datasheet(HTML) 18 Page - Texas Instruments |
18 / 39 page HO SR1 LO SR2 T1 T2 T1 T2 LM5035 SNVS428H – JANUARY 2006 – REVISED OCTOBER 2015 www.ti.com Feature Description (continued) 7.3.13 Synchronous Rectifier Control Outputs (SR1 and SR2) Synchronous rectification (SR) of the transformer secondary provides higher efficiency, especially for low-output voltage converters. The reduction of rectifier forward-voltage drop (0.5 V – 1.5 V) to 10 mV – 200 mV VDS voltage for a MOSFET, significantly reduces rectification losses. In a typical application, the transformer secondary winding is center tapped, with the output-power inductor in series with the center tap. The SR MOSFETs provide the ground path for the energized secondary winding and the inductor current. Figure 14 shows that the SR2 MOSFET is conducting while HO enables power transfer from the primary. The SR1 MOSFET must be disabled during this period, because the secondary winding connected to the SR1 MOSFET drain is twice the voltage of the center tap. At the conclusion of the HO pulse, the inductor current continues to flow through the SR1 MOSFET body diode. Because the body diode causes more loss than the SR MOSFET, efficiency can be improved by minimizing the T2 period, while maintaining sufficient timing margin over all conditions (component tolerances, and so on) to prevent shoot-through current. When LO enables power transfer from the primary, the SR1 MOSFET is enabled, and the SR2 MOSFET is off. Figure 14. HO, LO, SR1 and SR2 Timing Diagram During the time that neither HO nor LO is active, the inductor current is shared between both the SR1 and SR2 MOSFETs, which effectively shorts the transformer secondary and cancels the inductance in the windings. The SR2 MOSFET is disabled before LO delivers power to the secondary to prevent power being shunted to ground. The SR2 MOSFET body diode continues to carry about half the inductor current until the primary power raises the SR2 MOSFET drain voltage and reverse biases the body diode. Ideally, dead-time T1 would be set to the minimum time that allows the SR MOSFET to turn off before the SR MOSFET body diode starts conducting. The SR1 and SR2 outputs are powered directly by the VCC regulator. Each output is capable of sourcing and sinking 0.5-A peak. Typically, the SR1 and SR2 signals control SR MOSFET gate drivers through a pulse transformer. The actual gate sourcing and sinking currents are provided by the secondary-side bias supply and gate drivers. The timing of SR1 and SR2 with respect to HO and LO is shown in Figure 14. SR1 is configured out-of-phase with HO, and SR2 is configured out-of-phase with LO. The dead time between transitions is programmable by a resistor connected from the DLY pin to the AGND pin. Typically, RDLY is set in the range of 10 kΩ to 100 kΩ. The dead-time periods can be calculated using Equation 4 and Equation 5: T1 = [RDLY × 2.8 ps] + 20 ns (4) T2 = [RDLY × 1.35 ps] + 6 ns (5) To set the minimum dead time (propagation delays only), the DLY pin must be left open or connected to the REF pin. Any resistor value above 300 k Ω connected between the DLY pin and AGND will also provide the minimum period (approximately 5 ns). 18 Submit Documentation Feedback Copyright © 2006–2015, Texas Instruments Incorporated Product Folder Links: LM5035 |
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