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P3MS650100H Datasheet(PDF) 5 Page - ON Semiconductor

Part # P3MS650100H
Description  LVCMOS Peak EMI Reduction Clock Generator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

P3MS650100H Datasheet(HTML) 5 Page - ON Semiconductor

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P3MS650100H
http://onsemi.com
5
1.80
1.70
1.60
1.50
1.40
1.30
1.20
15
20
30
25
FREQUENCY (MHz)
Figure 2. Deviation vs. Frequency
(VDD = 1.6 V − 2.0 V)
1.80
15
20
30
25
1.70
1.60
1.50
1.40
1.30
1.20
1.10
1.00
35
40
50
45
55
60
FREQUENCY (MHz)
Figure 3. Deviation vs. Frequency
(VDD = 2.3 V − 3.6 V)
Noise Reduction Filter
CLKIN
VSS
VDD
2.2mF
C2
ModOUT
ModOUT
P3MS650100H
0.1mF
CLKIN
R
Rs
C1
VDDIN
Figure 4. Typical Application Schematic
Rs = Trace Impedance of PCB – Output Impedance of Device (Z0)
Note: Refer Pin Description table for Functionality details
4
1
23
PCB Layout Recommendation
For optimum device performance, following guidelines are recommended.
Dedicated VDD and GND planes.
The device must be isolated from system power supply noise. A 0.1
mF and a 2.2 mF decoupling capacitor should be
mounted on the component side of the board as close to the VDD pin as possible. No vias should be used between the
decoupling capacitor and VDD pin. The PCB trace to VDD pin and the ground via should be kept as short as
possible. All the VDD pins should have decoupling capacitors.
In an optimum layout all components are on the same side of the board, minimizing vias through other signal layers.


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