NCS2333 datasheet(5/15 Pages) ONSEMI

Part #	NCS2333

Description	Low Power, Zero-Drift Operational Amplifier

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Manufacturer	ONSEMI [ON Semiconductor]

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NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333

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5

ELECTRICAL CHARACTERISTICS: VS = 1.8 V to 5.5 V

At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.

Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

VS = +5 V

NCx333

3.5

10

mV

NCxx333

20

Offset Voltage Drift vs Temp

DVOS/DT

0.03

0.07

mV/°C

Offset Voltage Drift vs Supply

DVOS/DVS

VS = 1.8 V to 5.5 V

0.32

5

mV/V

Input Bias Current

IIB

±60

±200

pA

+400

Input Offset Current

IOS

±50

±400

pA

Common Mode Rejection Ratio

CMRR

VSS − 0.1 < VCM <

VDD + 0.1

VS = 1.8 V

111

dB

VS = 3.3 V

118

VS = 5.0 V

106

123

VS = 5.5 V

127

Input Resistance

RIN

Differential

180

G

W

Common Mode

90

Input Capacitance

CIN

NCx333

Differential

2.3

pF

Common Mode

4.6

NCx2333

Differential

4.1

Common Mode

7.9

OUTPUT CHARACTERISTICS

Open Loop Voltage Gain

AVOL

VSS + 100 mV < VCM < VDD − 100 mV

106

145

dB

Open Loop Output Impedance

Zout−OL

f = 350 kHz,

IO = 0 mA

NCx333

300

W

f = 255 kHz,

IO = 0 mA

NCx2333

460

Output Voltage High

VOH

Referenced to VDD

8

50

mV

70

Output Voltage Low

VOL

Referenced to VSS

5

50

mV

70

Output Current Capability

IO

Sinking Current

25

mA

Sourcing Current

6

Capacitive Load Drive

CL

See Figure 13

NOISE PERFORMANCE

Voltage Noise Density

eN

fIN = 1 kHz

62

nV /

√Hz

Voltage Noise

eP−P

fIN = 0.1 Hz to 10 Hz

1.1

mVPP

fIN = 0.01 Hz to 1 Hz

0.5

Current Noise Density

iN

fIN = 10 Hz

NCx333

350

fA /

√Hz

NCxx333

200

DYNAMIC PERFORMANCE

Gain Bandwidth Product

GBWP

CL = 100 pF

NCx333

350

kHz

NCxx333

255

Gain Margin

AM

CL = 100 pF

18

dB

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