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LC05112CMT Datasheet(PDF) 3 Page - ON Semiconductor

Part # LC05112CMT
Description  Protection IC with integrated Power MOS FET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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LC05112CMT
http://www.onsemi.com
3
Electrical Characteristics at Ta = 25C, unless otherwise specified.
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Conditions
Detection voltage
Over-charge detection voltage
Vov
Vov_set -25
Vov_set
Vov_set +25
mV
R1=680ohm
Over-charge release voltage
Vovr
Vovr_set -40
Vovr_set
Vovr_set +40
mV
R1=680ohm
Over-discharge detection voltage
Vuv
Vuv_set -50
Vuv_set
Vuv_set +50
mV
R1=680ohm
Over-discharge release voltage
Vuvr
Vuvr_set -100
Vuvr_set
Vuvr_set +100
mV
R1=680ohm, CS=0V
Discharge over-current
detection current
Ioc
Ioc_set -0.7
Ioc_set
Ioc_set +0.7
A
R2=1k
, VCC=3.7V,Pulse input
Discharge over-current
release current
Iocr
Ioc_set-0.7
Ioc_set
Ioc_set+0.7
A
R2=1k
, VCC=3.7V,Pulse input
Discharge over-current
detection current (Short circuit)
Ioc2
14.7
21.0
27.3
A
R2=1k
, VCC=3.7V,Pulse input
Charge over-current detection
current
Ioch
Ioch_set -0.7
Ioch_set
Ioch_set +0.7
A
R2=1k
, VCC=3.7V,Pulse input
Charge over-current release
current
Iochr
Ioch_set-0.7
Ioch_set
Ioch_set+0.7
A
R2=1k
, VCC=3.7V,Pulse input
Input voltage
0 V battery charge inhibition
battery voltage
Vinh
0.4
0.9
1.4
V
Current consumption
Operating current
Icc
3.0
6.0
A
At normal state,VCC=3.7V
Shutt down current
Ishutt
0.1
A
At Shutt down state,VCC=2.0V
Resistance
ON resistance 1 of
integrated power MOS FET
Ron1
10.4
13.0
18.2
m
VCC=3.1V
I=±2.0A
ON resistance 2 of
integrated power MOS FET
Ron2
9.6
12.0
15.6
m
VCC=3.7V
I=±2.0A
ON resistance 3 of
integrated power MOS FET
Ron3
9.2
11.6
15.0
m
VCC=4.0V
I=±2.0A
ON resistance 4 of
integrated power MOS FET
Ron4
8.8
11.2
14.0
m
VCC=4.5V
I=±2.0A
Internal resistance (VCC-CS)
Rcsu
300
k
VCC=2.0V, CS=0V
Internal resistance (VSS-CS)
Rcsd
15
k
VCC=3.7V, CS=1.0V
Detection and Release delay time
Over-charge detection delay time
Tov
0.8
1.0
1.2
sec
VCC=3.7V
Over-charge release delay time
Tovr
12.8
16.0
19.2
ms
VCC=3.7V
Over-discharge detection delay
time
Tuv
102
128
154
ms
VCC=3.7V
16
20
24
Over-discharge release delay
time
Tuvr
0.9
1.1
1.3
ms
VCC=3.7V
Discharge over-current
detection delay time 1
Toc1
9.6
12.0
14.4
ms
VCC=3.7V
Discharge over-current
release delay time 1
Tocr1
3.2
4.0
4.8
ms
VCC=3.7V
Discharge over-current
detection delay time 2 (Short
circuit)
Toc2
80
200
320
us
VCC=3.7V
Charge Over-current
detection delay time
Toch
12.8
16.0
19.2
ms
VCC=3.7V
Charge Over-current
release delay time
Tochr
3.2
4.0
4.8
ms
VCC=3.7V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.


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