Electronic Components Datasheet Search |
|
SIHLD110 Datasheet(PDF) 1 Page - Vishay Telefunken |
|
SIHLD110 Datasheet(HTML) 1 Page - Vishay Telefunken |
1 / 9 page IRLD110, SiHLD110 www.vishay.com Vishay Siliconix S12-0617-Rev. D, 26-Mar-12 1 Document Number: 91309 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion •End Stackable • Logic-Level Gate Drive •RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 6.4 mH, Rg = 25 , IAS = 5.6 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 100 RDS(on) ()VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single N-Channel MOSFET G D S HVMDIP D S G ORDERING INFORMATION Package HVMDIP Lead (Pb)-free IRLD110PbF SiHLD110-E3 SnPb IRLD110 SiHLD110 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5.0 V TA = 25 °C ID 1.0 A TA = 100 °C 0.70 Pulsed Drain Currenta IDM 8.0 Linear Derating Factor 0.0083 W/°C Single Pulse Avalanche Energyb EAS 100 mJ Avalanche Currenta IAR 1.0 A Repetitive Avalanche Energya EAR 0.13 mJ Maximum Power Dissipation TA = 25 °C PD 1.3 W Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d |
Similar Part No. - SIHLD110 |
|
Similar Description - SIHLD110 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |