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MT55L512L18P Datasheet(PDF) 25 Page - Micron Technology

Part No. MT55L512L18P
Description  8Mb ZBT SRAM
Download  30 Pages
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Maker  MICRON [Micron Technology]
Homepage  http://www.micron.com
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MT55L512L18P Datasheet(HTML) 25 Page - Micron Technology

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8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18P_2.p65 – Rev. 6/01
©2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
READ/WRITE TIMING
WRITE
D(A1)
123
456789
CLK
t KHKH
tKLKH
tKHKL
10
CE#
tKHCX
tCVKH
R/W#
CKE#
tKHEX
tEVKH
BWx#
ADV/LD#
tKHAX
tAVKH
ADDRESS
A1
A2
A3
A4
A5
A6
A7
tKHDX
tDVKH
DQ
COMMAND
tKHQX1
D(A1)
D(A2)
D(A5)
Q(A4)
Q(A3)
D(A2+1)
tKHQX
tKHQZ
tKHQV
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
OE#
tGLQV
tGLQX
tGHQZ
tKHQX
DON’T CARE
UNDEFINED
Q(A6)
Q(A4+1)
NOTE: 1. For this waveform, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
-6
-7.5
-10
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
tGHQZ
3.5
4.2
5.0
ns
tAVKH
1.5
1.7
2.0
ns
tEVKH
1.5
1.7
2.0
ns
tCVKH
1.5
1.7
2.0
ns
tDVKH
1.5
1.7
2.0
ns
tKHAX
0.5
0.5
0.5
ns
tKHEX
0.5
0.5
0.5
ns
tKHCX
0.5
0.5
0.5
ns
tKHDX
0.5
0.5
0.5
ns
READ/WRITE TIMING PARAMETERS
-6
-7.5
-10
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
tKHKH
6.0
7.5
10
ns
fKF
166
133
100
MHz
tKHKL
1.7
2.0
3.2
ns
tKLKH
1.7
2.0
3.2
ns
tKHQV
3.5
4.2
5.0
ns
tKHQX
1.5
1.5
1.5
ns
tKHQX1
1.5
1.5
1.5
ns
tKHQZ
1.5
3.5
1.5
3.5
1.5
3.5
ns
tGLQV
3.5
4.2
5.0
ns
tGLQX
0
0
0
ns


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