Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

MT48LC8M16A2FC-8E Datasheet(PDF) 19 Page - Micron Technology

Part # MT48LC8M16A2FC-8E
Description  SYNCHRONOUS DRAM
Download  59 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT48LC8M16A2FC-8E Datasheet(HTML) 19 Page - Micron Technology

Back Button MT48LC8M16A2FC-8E Datasheet HTML 15Page - Micron Technology MT48LC8M16A2FC-8E Datasheet HTML 16Page - Micron Technology MT48LC8M16A2FC-8E Datasheet HTML 17Page - Micron Technology MT48LC8M16A2FC-8E Datasheet HTML 18Page - Micron Technology MT48LC8M16A2FC-8E Datasheet HTML 19Page - Micron Technology MT48LC8M16A2FC-8E Datasheet HTML 20Page - Micron Technology MT48LC8M16A2FC-8E Datasheet HTML 21Page - Micron Technology MT48LC8M16A2FC-8E Datasheet HTML 22Page - Micron Technology MT48LC8M16A2FC-8E Datasheet HTML 23Page - Micron Technology Next Button
Zoom Inzoom in Zoom Outzoom out
 19 / 59 page
background image
19
128Mb: x4, x8, x16 SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MSDRAM_E.p65 – Rev. E; Pub. 1/02
©2001, Micron Technology, Inc.
128Mb: x4, x8, x16
SDRAM
Data from any READ burst may be truncated with a
subsequent WRITE command, and data from a fixed-
length READ burst may be immediately followed by data
from a WRITE command (subject to bus turnaround
limitations). The WRITE burst may be initiated on the
clock edge immediately following the last (or last de-
sired) data element from the READ burst, provided that I/
O contention can be avoided. In a given system design,
there may be a possibility that the device driving the
input data will go Low-Z before the SDRAM DQs go High-
Z. In this case, at least a single-cycle delay should occur
between the last read data and the WRITE command.
The DQM input is used to avoid I/O contention, as
shown in Figures 9 and 10. The DQM signal must be
asserted (HIGH) at least two clocks prior to the WRITE
command (DQM latency is two clocks for output buffers)
DON’T CARE
READ
NOP
NOP
NOP
NOP
DQM
CLK
DQ
DOUT n
T2
T1
T4
T3
T0
COMMAND
ADDRESS
BANK,
COL n
WRITE
DIN b
BANK,
COL b
T5
DS
tHZ
t
NOTE:
A CAS latency of three is used for illustration. The READ command
may be to any bank, and the WRITE command may be to any bank.
Figure 10
READ to WRITE With
Extra Clock Cycle
Figure 9
READ to WRITE
READ
NOP
NOP
WRITE
NOP
CLK
T2
T1
T4
T3
T0
DQM
DQ
DOUT n
COMMAND
DIN b
ADDRESS
BANK,
COL n
BANK,
COL b
DS
tHZ
t
tCK
NOTE:
A CAS latency of three is used for illustration. The READ
command may be to any bank, and the WRITE command
may be to any bank. If a burst of one is used, then DQM is
not required.
to suppress data-out from the READ. Once the WRITE
command is registered, the DQs will go High-Z (or re-
main High-Z), regardless of the state of the DQM signal,
provided the DQM was active on the clock just prior to
the WRITE command that truncated the READ com-
mand. If not, the second WRITE will be an invalid WRITE.
For example, if DQM was LOW during T4 in Figure 10,
then the WRITEs at T5 and T7 would be valid, while the
WRITE at T6 would be invalid.
The DQM signal must be de-asserted prior to the
WRITE command (DQM latency is zero clocks for input
buffers) to ensure that the written data is not masked.
Figure 9 shows the case where the clock frequency allows
for bus contention to be avoided without adding a NOP
cycle, and Figure 10 shows the case where the additional
NOP is needed.


Similar Part No. - MT48LC8M16A2FC-8E

ManufacturerPart #DatasheetDescription
logo
Micron Technology
MT48LC8M16A2 MICRON-MT48LC8M16A2 Datasheet
115Kb / 4P
   SYNCHRONOUS DRAM
MT48LC8M16A2TG MICRON-MT48LC8M16A2TG Datasheet
3Mb / 51P
   SYNCHRONOUS DRAM
MT48LC8M16A2TG MICRON-MT48LC8M16A2TG Datasheet
4Mb / 55P
   SYNCHRONOUS DRAM
MT48LC8M16A2TG-6A MICRON-MT48LC8M16A2TG-6A Datasheet
115Kb / 4P
   SYNCHRONOUS DRAM
More results

Similar Description - MT48LC8M16A2FC-8E

ManufacturerPart #DatasheetDescription
logo
Micron Technology
MT48LC64M4A2 MICRON-MT48LC64M4A2 Datasheet
1Mb / 62P
   SYNCHRONOUS DRAM
MT48LC32M4A1 MICRON-MT48LC32M4A1 Datasheet
3Mb / 51P
   SYNCHRONOUS DRAM
logo
Eorex Corporation
EM482M3244VTB EOREX-EM482M3244VTB_15 Datasheet
1Mb / 17P
   Synchronous DRAM
EM488M1644VTG EOREX-EM488M1644VTG_15 Datasheet
1Mb / 18P
   Synchronous DRAM
EM48AM1684VBE EOREX-EM48AM1684VBE_15 Datasheet
1Mb / 17P
   Synchronous DRAM
EM484M1644VTC EOREX-EM484M1644VTC_15 Datasheet
199Kb / 17P
   Synchronous DRAM
EM484M1644VTD EOREX-EM484M1644VTD_15 Datasheet
1Mb / 18P
   Synchronous DRAM
EM488M3244VBD EOREX-EM488M3244VBD_15 Datasheet
1Mb / 18P
   Synchronous DRAM
logo
Alliance Semiconductor ...
AS4C4M16SA ALSC-AS4C4M16SA Datasheet
1Mb / 54P
   Synchronous DRAM
logo
Micron Technology
MT48LC16M4A2 MICRON-MT48LC16M4A2 Datasheet
1Mb / 55P
   SYNCHRONOUS DRAM
MT48LC1M16A1 MICRON-MT48LC1M16A1 Datasheet
1Mb / 51P
   SYNCHRONOUS DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com