Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

MT4C1M16E5 Datasheet(PDF) 4 Page - Micron Technology

Part No. MT4C1M16E5
Description  EDO DRAM
Download  24 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT4C1M16E5 Datasheet(HTML) 4 Page - Micron Technology

  MT4C1M16E5 Datasheet HTML 1Page - Micron Technology MT4C1M16E5 Datasheet HTML 2Page - Micron Technology MT4C1M16E5 Datasheet HTML 3Page - Micron Technology MT4C1M16E5 Datasheet HTML 4Page - Micron Technology MT4C1M16E5 Datasheet HTML 5Page - Micron Technology MT4C1M16E5 Datasheet HTML 6Page - Micron Technology MT4C1M16E5 Datasheet HTML 7Page - Micron Technology MT4C1M16E5 Datasheet HTML 8Page - Micron Technology MT4C1M16E5 Datasheet HTML 9Page - Micron Technology Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 24 page
background image
4
1 Meg x 16 EDO DRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D52_B.p65 – Rev. B; Pub. 3/01
©2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
STORED
DATA
1
1
0
1
1
1
1
1
RAS#
CASL#
WE#
X = NOT EFFECTIVE (DON'T CARE)
ADDRESS 1
ADDRESS 0
0
1
0
1
0
0
0
0
WORD WRITE
LOWER BYTE WRITE
CASH#
INPUT
DATA
0
0
1
0
0
0
0
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
INPUT
DATA
1
1
0
1
1
1
1
1
INPUT
DATA
STORED
DATA
1
1
0
1
1
1
1
1
INPUT
DATA
STORED
DATA
0
0
1
0
0
0
0
0
1
0
1
0
1
1
1
1
STORED
DATA
0
0
1
0
0
0
0
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
1
0
1
0
1
1
1
1
UPPER BYTE
(DQ8-DQ15)
OF WORD
LOWER BYTE
(DQ0-DQ7)
OF WORD
Figure 3
WORD and BYTE WRITE Example
However, an EARLY WRITE on one byte and a LATE
WRITE on the other byte, after a CAS# precharge has
been satisfied, are permissible.
DRAM REFRESH
Preserve correct memory cell data by maintaining
power and executing any RAS# cycle (READ, WRITE) or
RAS# REFRESH cycle (RAS#-ONLY, CBR or HIDDEN)
so that all 1,024 combinations of RAS# addresses are
executed within tREF (MAX), regardless of sequence.
The CBR, EXTENDED and SELF REFRESH cycles will
invoke the internal refresh counter for automatic RAS#
addressing.
An optional self refresh mode is available on the “S”
version. The self refresh feature is initiated by per-
forming a CBR REFRESH cycle and holding RAS# LOW
for the specified tRASS. The “S” option allows the user
the choice of a fully static, low-power data retention
mode or a dynamic refresh mode at the extended re-
fresh period of 128ms, or 125µs per row, when using a
distributed CBR REFRESH. This refresh rate can be
applied during normal operation, as well as during a
standby or battery backup mode.
The self refresh mode is terminated by driving
RAS# HIGH for a minimum time of tRPS. This delay
allows for the completion of any internal refresh cycles
that may be in process at the time of the RAS# LOW-to-
HIGH transition. If the DRAM controller uses a distrib-
uted refresh sequence, a burst refresh is not required
upon exiting self refresh. However, if the DRAM con-
troller utilizes a RAS#-ONLY or burst refresh sequence,
all 1,024 rows must be refreshed within the average
internal refresh rate, prior to the resumption of normal
operation.
STANDBY
Returning RAS# and CAS# HIGH terminates a
memory cycle and decreases chip current to a reduced
standby level. The chip is preconditioned for the next
cycle during the RAS# HIGH time.


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24 


Datasheet Download

Go To PDF Page

Related Electronics Part Number

Part No.DescriptionHtml ViewManufacturer
MSC23CV43257A 4 194 304-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1  2  3  4  5  More OKI electronic componets
MSC2323258A 2 097 152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1  2  3  4  5  More OKI electronic componets
MSC23V26457TA 2 097 152-Word x 64-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1  2  3  4  5  More OKI electronic componets
HY51VS17403HG 4M x 4Bit EDO DRAM 1  2  3  4  5  More Hynix Semiconductor
MT4LC4M4E8 4 MEG x 4 EDO DRAM 1  2  3  4  5  More Micron Technology
M11L416256SA 256 K x 16 DRAM EDO PAGE MODE 1  2  3  4  5  More Elite Semiconductor Memory Technology Inc.
MSC23V47257TA 4 194 304-Word ´ 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1  2  3  4  5  OKI electronic componets
HY51VS18163HG 1M x 16Bit EDO DRAM 1  2  3  4  5  More Hynix Semiconductor
HM5118165 16M EDO DRAM 1-Mword x 16-bit 1 k Refresh 1  2  3  4  5  More Hitachi Semiconductor
HYM364025S 4M x 36-Bit EDO - DRAM Module 1  2  3  4  5  More Siemens Semiconductor Group

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn