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MT4C1M16E5 Datasheet(PDF) 3 Page - Micron Technology

Part No. MT4C1M16E5
Description  EDO DRAM
Download  24 Pages
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT4C1M16E5 Datasheet(HTML) 3 Page - Micron Technology

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1 Meg x 16 EDO DRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D52_B.p65 – Rev. B; Pub. 3/01
©2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
V
V
IH
IL
CASL#/CASH#
V
V
IH
IL
RAS#
V
V
IH
IL
ADDR
ROW
COLUMN (A)
DON‘T CARE
UNDEFINED
V
V
IH
IL
WE#
V
V
IOH
IOL
OPEN
DQ
tWPZ
The DQs go to High-Z if WE# falls, and if tWPZ is met,
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
V
V
IH
IL
OE#
VALID DATA (B)
t
WHZ
WE# may be used to disable the DQs to prepare
for input data in an EARLY WRITE cycle. The DQs
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
t
WHZ
COLUMN (D)
VALID DATA (A)
COLUMN (B)
COLUMN (C)
INPUT DATA (C)
Figure 2
WE# Control of DQs
PAGE ACCESS
Page operations allow faster data operations (READ,
WRITE or READ-MODIFY-WRITE) within a row-
address-defined page boundary. The page cycle is al-
ways initiated with a row address strobed in by RAS#,
followed by a column address strobed in by CAS#. Ad-
ditional columns may be accessed by providing valid
column addresses, strobing CAS# and holding RAS#
LOW, thus executing faster memory cycles. Returning
RAS# HIGH terminates the page mode of operation,
i.e., closes the page.
EDO PAGE MODE
The 1 Meg x 16 provides EDO PAGE MODE, which is
an accelerated FAST-PAGE-MODE cycle. The primary
advantage of EDO is the availability of data-out even
after CAS# returns HIGH. EDO provides for CAS#
precharge time (tCP) to occur without the output data
going invalid. This elimination of CAS# output control
provides for pipelined READs.
FAST-PAGE-MODE DRAMs have traditionally
turned the output buffers off (High-Z) with the rising
edge of CAS#. EDO-PAGE-MODE DRAMs operate like
FAST-PAGE-MODE DRAMs, except data will remain
valid or become valid after CAS# goes HIGH during
READs, provided RAS# and OE# are held LOW. If OE# is
pulsed while RAS# and CAS# are LOW, data will toggle
from valid data to High-Z and back to the same valid
data. If OE# is toggled or pulsed after CAS# goes HIGH
while RAS# remains LOW, data will transition to and
remain High-Z (refer to Figure 1). WE# can also perform
the function of disabling the output drivers under cer-
tain conditions, as shown in Figure 2.
During an application, if the DQ outputs are wire
OR’d, OE# must be used to disable idle banks of DRAMs.
Alternatively, pulsing WE# to the idle banks during
CAS# HIGH time will also High-Z the outputs. Inde-
pendent of OE# control, the outputs will disable after
tOFF, which is referenced from the rising edge of RAS#
or CAS#, whichever occurs last.
BYTE ACCESS CYCLE
The BYTE WRITEs and BYTE READs are determined
by the use of CASL# and CASH#. Enabling CASL# se-
lects a lower BYTE access (DQ0-DQ7). Enabling CASH#
selects an upper BYTE access (DQ8-DQ15). Enabling
both CASL# and CASH# selects a WORD WRITE cycle.
The 1 Meg x 16 may be viewed as two 1 Meg x 8
DRAMs that have common input controls, with the ex-
ception of the CAS# inputs. Figure 3 illustrates the BYTE
WRITE and WORD WRITE cycles.
Additionally, both bytes must always be of the same
mode of operation if both bytes are active. A CAS#
precharge must be satisfied prior to changing modes of
operation between the upper and lower bytes. For ex-
ample, an EARLY WRITE on one byte and a LATE WRITE
on the other byte are not allowed during the same cycle.


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