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CM1215-04SO Datasheet(PDF) 3 Page - ON Semiconductor |
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CM1215-04SO Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 9 page CM1215 http://onsemi.com 3 SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Operating Supply Voltage (VP−VN) 6 V Diode Forward DC Current (Note 1) 20 mA DC Voltage at any Channel Input (VN−0.5) to (VP+0.5) V Operating Temperature Range Ambient −40 to +85 °C Junction −40 to +125 °C Storage Temperature Range −40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature Range –40 to +85 °C Package Power Rating SOT23−3 Package (CM1215−01SO) SOT143 Package (CM1215−02SR) SOT23−5 Package (CM1215−02SO) SOT23−6 Package (CM1215−04SO) 225 225 225 225 mW Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Unit VP Operating Supply Voltage (VP−VN) 3.3 5.5 V IP Operating Supply Current (VP−VN) = 3.3 V 8 mA VF Diode Forward Voltage Top Diode Bottom Diode IF = 20 mA; TA = 25°C 0.6 0.6 0.8 0.8 0.95 0.95 V ILEAK Channel Leakage Current TA = 25°C; VP = 5 V, VN = 0 V ±0.1 ±1.0 mA CIN Channel Input Capacitance At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65V; 1.6 2.0 pF ΔCIN Channel I/O to GND Capacitance Difference 0.04 pF CMUTUAL Mutual Capacitance (VP−VN) = 3.3 V 0.13 pF VESD ESD Protection Peak Discharge Voltage at any channel input, in system, contact discharge per IEC 61000−4−2 standard TA = 25°C (Notes 2 and 3) ±15 kV VCL Channel Clamp Voltage Positive Transients Negative Transients IPP = 1 A, tP = 8/20 mS; TA = 25°C; VP+1.5 VN−1.5 V RDYN Dynamic Resistance Positive transients Negative transients IPP = 1 A, tP = 8/20 mS; TA = 25°C; 0.4 0.4 W 1. All parameters specified at TA = −40°C to +85°C unless otherwise noted. 2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded. 3. From I/O pins to VP or VN only. VP bypassed to VN with low ESR 0.2 mF ceramic capacitor. |
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