CM1215-04SO datasheet(3/9 Pages) ONSEMI

Part #	CM1215-04SO

Description	4-Channel Low Capacitance ESD Arrays

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

3 / 9 page

CM1215

http://onsemi.com

3

SPECIFICATIONS

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameter

Rating

Units

Operating Supply Voltage (VP−VN)

6

V

Diode Forward DC Current (Note 1)

20

mA

DC Voltage at any Channel Input

(VN−0.5) to (VP+0.5)

V

Operating Temperature Range

Ambient

−40 to +85

°C

Junction

−40 to +125

°C

Storage Temperature Range

−40 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 3. STANDARD OPERATING CONDITIONS

Parameter

Rating

Units

Operating Temperature Range

–40 to +85

°C

Package Power Rating

SOT23−3 Package (CM1215−01SO)

SOT143 Package (CM1215−02SR)

SOT23−5 Package (CM1215−02SO)

SOT23−6 Package (CM1215−04SO)

225

mW

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VP

Operating Supply Voltage (VP−VN)

3.3

5.5

V

IP

Operating Supply Current

(VP−VN) = 3.3 V

8

mA

VF

Diode Forward Voltage

Top Diode

Bottom Diode

IF = 20 mA; TA = 25°C

0.6

0.8

0.95

V

ILEAK

Channel Leakage Current

TA = 25°C; VP = 5 V, VN = 0 V

±0.1

±1.0

mA

CIN

Channel Input Capacitance

At 1 MHz, VP = 3.3 V,

VN = 0 V, VIN = 1.65V;

1.6

2.0

pF

ΔCIN

Channel I/O to GND Capacitance Difference

0.04

pF

CMUTUAL

Mutual Capacitance

(VP−VN) = 3.3 V

0.13

pF

VESD

ESD Protection

Peak Discharge Voltage at any channel input,

in system, contact discharge

per IEC 61000−4−2 standard

TA = 25°C

(Notes 2 and 3)

±15

kV

VCL

Channel Clamp Voltage

Positive Transients

Negative Transients

IPP = 1 A, tP = 8/20 mS;

TA = 25°C;

VP+1.5

VN−1.5

V

RDYN

Dynamic Resistance

Positive transients

Negative transients

IPP = 1 A, tP = 8/20 mS;

TA = 25°C;

0.4

W

1. All parameters specified at TA = −40°C to +85°C unless otherwise noted.

2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.

3. From I/O pins to VP or VN only. VP bypassed to VN with low ESR 0.2 mF ceramic capacitor.

Similar Part No. - CM1215-04SO

Manufacturer	Part #	Datasheet	Description
California Micro Device...	CM1215-04SO	338Kb / 10P	1-, 2- and 4-Channel Low Capacitance ESD Arrays

More results

Similar Description - CM1215-04SO

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	ESD7124	103Kb / 5P	4-Channel Low Capacitance ESD Arrays August, 2014 ??Rev. 0
ON Semiconductor	CM1225	344Kb / 11P	4-Channel Low Capacitance ESD Protection Arrays April 2010 ??Rev. 2
California Micro Device...	CM1215	338Kb / 10P	1-, 2- and 4-Channel Low Capacitance ESD Arrays
ON Semiconductor	CM1224	389Kb / 14P	2- and 4-Channel Low Capacitance ESD Protection Arrays April 2010 ??Rev. 3
	CM1293A	397Kb / 16P	2-and 4-Channel Low Capacitance ESD Protection Arrays April 2010 ??Rev. 4
	CM1224	301Kb / 11P	2 and 4-Channel Low Capacitance ESD Protection Arrays July, 2012 ??Rev. 5
	CM1293	344Kb / 10P	8-Channel Low Capacitance ESD Protection Arrays April 2010 ??Rev. 3
California Micro Device...	CM1293	394Kb / 10P	2, 4, and 8-Channel Low Capacitance ESD Protection Arrays
ON Semiconductor	CM1213A	518Kb / 13P	1, 2 and 4-Channel Low Capacitance ESD Protection Arrays July, 2011 ??Rev. 7
ON Semiconductor	CM1293A	518Kb / 9P	Low Capacitance ESD Protection Arrays July, 2012 ??Rev. 8

More results

CM1215-04SO Datasheet(PDF) 3 Page - ON Semiconductor

CM1215-04SO Datasheet(HTML) 3 Page - ON Semiconductor

Similar Part No. - CM1215-04SO

Similar Description - CM1215-04SO

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL