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CAV25010YE-G Datasheet(PDF) 2 Page - ON Semiconductor

Part # CAV25010YE-G
Description  SPI Serial CMOS EEPROM
Download  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAV25010YE-G Datasheet(HTML) 2 Page - ON Semiconductor

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CAV25010, CAV25020, CAV25040
http://onsemi.com
2
MARKING DIAGRAMS
25010E = CAV25010
25020E = CAV25020
25040E = CAV25040
A
= Assembly Location
Y
= Production Year (Last Digit)
M
= Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
G
= Pb−Free Package
25xx0E
AYMXXX
S01E = CAV25010
S02E = CAV25020
S04E = CAV25040
A
= Assembly Location
Y
= Production Year (Last Digit)
M
= Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
G
= Pb−Free Package
SxxE
AYMXXX
(SOIC−8)
(TSSOP−8)
G
G
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to VCC + 0.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Note 3)
Endurance
1,000,000
Program / Erase Cycles
TDR
Data Retention
100
Years
Table 3. D.C. OPERATING CHARACTERISTICS
(VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Supply Current (Read Mode)
Read, VCC = 5.5 V, 10 MHz, SO open
2
mA
ICCW
Supply Current (Write Mode)
Write, VCC = 5.5 V, 10 MHz, SO open
2
mA
ISB1
Standby Current
VIN = GND or VCC, CS = VCC,
WP = VCC, VCC = 5.5 V
2
mA
ISB2
Standby Current
VIN = GND or VCC, CS = VCC,
WP = GND, VCC = 5.5 V
5
mA
IL
Input Leakage Current
VIN = GND or VCC
−2
2
mA
ILO
Output Leakage Current
CS = VCC,
VOUT = GND or VCC
−1
2
mA
VIL
Input Low Voltage
−0.5
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 3.0 mA
0.4
V
VOH
Output High Voltage
IOH = −1.6 mA
VCC − 0.8 V
V
Table 4. PIN CAPACITANCE (Note 2) (TA = 25°C, f = 1.0 MHz, VCC = +5.0 V)
Symbol
Test
Conditions
Min
Typ
Max
Units
COUT
Output Capacitance (SO)
VOUT = 0 V
8
pF
CIN
Input Capacitance (CS, SCK, SI, WP, HOLD)
VIN = 0 V
8
pF
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.


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