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G10768 Datasheet(PDF) 2 Page - Hamamatsu Corporation

Part No. G10768
Description  Near infrared image sensor (0.9 to 1.7 m) with 1024 pixels and high-speed line rate
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Maker  HAMAMATSU [Hamamatsu Corporation]
Homepage  http://www.hamamatsu.com
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G10768 Datasheet(HTML) 2 Page - Hamamatsu Corporation

   
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2
InGaAs linear image sensors
G10768 series
Specification (Ta=25 °C, fv=5MHz, Vdd=5 V, INP=3.5 V, Vref1=Vref2=Vref3=2.5 V, CE=1400 nV/e-, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Peak sensitivity wavelength
λp
-
1.55
-
μm
Saturation charge
Qsat
V
φ=5 V
-
0.25
-
pC
Dark current
ID
-5
±1
+5
pA
RMS noise voltage (readout noise)
N
Standard deviation
Sample number 1000
Integration time 30 μs
-
2
6
mV rms
Saturation voltage amplitude
Vsat
-
2.5
-
V
Defective pixel *1
-
CE *2=1400 nV/e-
(worst-case condition)
--
1
%
*1: Pixels with dark current or RMS noise voltage higher than the maximum value.
*2: Conversion efficiency
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Vdd
4.7
5.0
5.3
V
Supply current
Ivdd
-
100
150
mA
Sample and hold voltage 1
Vref1
-
2.5
-
V
Sample and hold current 1
Iref1
-
-
1
mA
Sample and hold voltage 2
Vref2
-
2.5
-
V
Sample and hold current 2
Iref2
-
-
1
mA
Output reset voltage
Vref3
-
2.5
-
V
Output reset current
Iref3
-
-
1
mA
Element bias
Supply voltage
INP
3.3
3.5
3.6
V
Supply current
-
-
-
1
mA
Ground
Vss
-
0
-
V
Clock frequency
-
0.5
5.0
6.67
MHz
Clock pulse voltage
High
V
φ
4.7
5
5.3
V
Low
-
0
0.4
V
Reset pulse voltage
High
V(RES)
4.7
5
5.3
V
Low
-
0
0.4
V
Video output voltage
Vout+
High
Vout+(high)
-
4
-
V
Low
Vout+(low)
-
2.5
-
Vout-
High
Vout-(high)
-
2.5
-
V
Low
Vout-(low)
-
1
-
Video data rate
fv
-
f
-
Hz
Selection logic of conversion efficiency
Parameter
Symbol
Typ.
Cfa
Cfb
Cfc
Conversion efficiency
CE
1400 nV/e-
HL
L
280 nV/e-
HH
L
70 nV/e-
HLH
14 nV/e-
HHH
Note: L=0 V (Vss), H=5 V (Vdd)


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