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SIS468DN Datasheet(PDF) 2 Page - Vishay Telefunken |
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SIS468DN Datasheet(HTML) 2 Page - Vishay Telefunken |
2 / 13 page www.vishay.com 2 Document Number: 63750 S12-0542-Rev. A, 12-Mar-12 Vishay Siliconix SiS468DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 80 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 36 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.5 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 1 µA VDS = 80 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 10 A 0.0160 0.0195 VGS 7.5 V, ID = 7 A 0.0170 0.0210 VGS 4.5 V, ID = 5 A 0.0230 0.0320 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 25 S Dynamicb Input Capacitance Ciss VDS = 40 V, VGS = 0 V, f = 1 MHz 780 pF Output Capacitance Coss 400 Reverse Transfer Capacitance Crss 39 Total Gate Charge Qg VDS = 40 V, VGS = 10 V, ID = 10 A 18.1 28 nC VDS = 40 V, VGS = 7.5 V, ID = 10 A 13.8 21 VDS = 40 V, VGS = 4.5 V, ID = 10 A 8.7 14 Gate-Source Charge Qgs 2.6 Gate-Drain Charge Qgd 3.9 Output Charge Qoss VDS = 40 V, VGS = 0 V 23 35 Gate Resistance Rg f = 1 MHz 0.2 1 2 Turn-On Delay Time td(on) VDD = 40 V, RL = 4 ID 10 A, VGEN = 7.5 V, Rg = 1 918 ns Rise Time tr 11 22 Turn-Off Delay Time td(off) 15 30 Fall Time tf 918 Turn-On Delay Time td(on) VDD = 40 V, RL = 4 ID 10 A, VGEN = 10 V, Rg = 1 816 Rise Time tr 10 20 Turn-Off Delay Time td(off) 15 30 Fall Time tf 918 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 30 A Pulse Diode Forward Current ISM 60 Body Diode Voltage VSD IS = 4 A, VGS 0 V 0.78 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 31 60 ns Body Diode Reverse Recovery Charge Qrr 25 50 nC Reverse Recovery Fall Time ta 15.5 ns Reverse Recovery Rise Time tb 15.5 |
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