IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L

www.vishay.com

Vishay Siliconix

S15-1659-Rev. D, 20-Jul-15

1

Document Number: 90377

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Advanced process technology

• Surface mount (IRFZ48S, SiHFZ48S)

• Low-profile through-hole (IRFZ48L, SiHFZ48L)

• 175 °C operating temperature

•Fast switching

• Material

categorization:

for

definitions

of

compliance

please

see

www.vishay.com/doc?99912

Note



RoHS-compliant and / or parts that are non-RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.



accommodating die sizes up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2 W in a typical surface mount application.



The through-hole version (IRFZ48L, SiHFZ48L) is available

for low-profile applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Uses IRFZ48, SiHFZ48 data and test conditions.

f. Calculated continuous current based on maximum allowable junction temperature.

PRODUCT SUMMARY

60

0.018

110

29

36

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

Available

Available

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

SiHFZ48S-GE3

SiHFZ48L-GE3

Lead (Pb)-free

IRFZ48SPbF

-

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

50

A

50

290

Linear Derating Factor

1.3

W/°C

100

mJ

Maximum Power Dissipation

190

W

3.7

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

-55 to +175

°C

for 10 s

300