SI4154DY datasheet(1/7 Pages) TFUNK

Part #	SI4154DY

Description	N-Channel 40-V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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Vishay Siliconix

Si4154DY

New Product

Document Number: 65000

S09-0998-Rev. A, 01-Jun-09

www.vishay.com

1

N-Channel 40-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•POL

•

Synchronous Rectification

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 80 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

40

0.0033 at VGS = 10 V

36

32.5 nC

0.0039 at VGS = 4.5 V

33

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information: SI4154DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

36

A

TC = 70 °C

26

TA = 25 °C

24b, c

TA = 70 °C

19b, c

Pulsed Drain Current

IDM

70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

7.0

TA = 25 °C

3.1b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

40

Avalanche Energy

EAS

80

mJ

Maximum Power Dissipation

TC = 25 °C

PD

7.8

W

TC = 70 °C

5.0

TA = 25 °C

3.5b, c

TA = 70 °C

2.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

29

35

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

13

16

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