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IKB10N60T Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IKB10N60T Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 13 page IKB10N60T TRENCHSTOP ™ Series p IFAG IPC TD VLS 2 Rev. 2.6 11.05.2015 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case R t hJC 1.35 K/W Diode thermal resistance, junction – case R t hJC D 1.9 Thermal resistance, junction – ambient R t hJA Footprint 6cm² Cu 65 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V( BR )C ES VGE = 0V , IC =0 .2mA 600 - - V Collector-emitter saturation voltage VC E( sat ) VGE = 15 V , IC = 10 A T j =2 5 C T j =1 7 5 C - - 1.5 1.8 2.05 - Diode forward voltage VF VGE = 0V , IF =1 0 A T j =2 5 C T j =1 7 5 C - - 1.6 1.6 2.0 - Gate-emitter threshold voltage VG E( t h) I C = 0. 3m A, VCE = VGE 4.1 4.6 5.7 Zero gate voltage collector current I CE S VCE = 600V, VGE = 0V T j =2 5 C T j =1 7 5 C - - - - 40 1000 µA Gate-emitter leakage current I GE S VCE = 0V , VGE =2 0 V - - 100 nA Transconductance g fs VCE = 20 V , IC = 10 A - 6 - S Integrated gate resistor R G int none Ω Dynamic Characteristic Input capacitance C i ss VCE = 25 V , VGE = 0V , f = 1 M H z - 551 - pF Output capacitance C os s - 40 - Reverse transfer capacitance C rs s - 17 - Gate charge Q Gat e VCC = 48 0 V, I C =10 A VGE = 15 V - 62 - nC Internal emitter inductance measured 5mm (0.197 in.) from case L E - 7 - nH Short circuit collector current 1) I C( SC ) VGE = 15 V ,t SC 5 s VC C = 4 0 0 V, T j = 25 C - 100 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. |
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