SIZ916DT datasheet(8/14 Pages) TFUNK

Part #	SIZ916DT

Description	Dual N-Channel 30 V (D-S) MOSFETs

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Manufacturer	TFUNK [Vishay Telefunken]

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SiZ916DT

www.vishay.com

Vishay Siliconix

S15-1672-Rev. B, 20-Jul-15

8

Document Number: 62721

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CHANNEL-2 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

25

50

75

100

0

0.5

1

1.5

2

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 4 V

V

GS = 3V

0.0005

0.0010

0.0015

0.0020

0.0025

0

20

40

60

80

100

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

22

44

66

88

110

Q

g - Total Gate Charge (nC)

V

DS = 24 V

V

DS = 8 V

V

DS = 15 V

I

D = 20 A

0

1

2

3

4

5

0.6

0

1.2

1.8

2.4

3

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55

0

2200

4400

6600

8800

0

6

12

18

24

30

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.7

0.95

1.2

1.45

1.7

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 20A

V

GS = 10 V

V

GS = 4.5 V

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