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SIZ340DT Datasheet(PDF) 2 Page - Vishay Telefunken |
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SIZ340DT Datasheet(HTML) 2 Page - Vishay Telefunken |
2 / 14 page SiZ340DT www.vishay.com Vishay Siliconix S14-0611-Rev. B, 24-Mar-14 2 Document Number: 62877 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2. THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambient a,b t ≤ 10 s RthJA 27 34 24 30 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 67.5 3.24 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol TEST CONDITIONS Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA Ch-1 30 - - V Ch-2 30 - - VDS Temperature Coefficient ΔVDS/TJ ID = 250 μA Ch-1 - 18.4 - mV/°C Ch-2 - 30 - VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 μA Ch-1 - -4.3 - Ch-2 - -5 - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA Ch-1 1 - 2.4 V Ch-2 1 - 2.4 Gate Source Leakage IGSS VDS =0 V, VGS = +20 V, -16 V Ch-1 - - ± 100 nA Ch-2 - - ± 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 - - 1 μA Ch-2 - - 1 VDS = 30 V, VGS =0 V, TJ = 55 °C Ch-1 - - 5 Ch-2 - - 5 On-State Drain Current b ID(on) VDS ≥ 5 V,VGS = 10 V Ch-1 10 - - A Ch-2 10 - - Drain-Source On-State Resistance b RDS(on) VGS = 10 V, ID = 15.6 A Ch-1 - 0.0079 0.0095 Ω VGS = 10 V, ID = 20 A Ch-2 - 0.0042 0.0051 VGS = 4.5 V, ID = 13 A Ch-1 - 0.0110 0.0137 VGS = 4.5 V, ID = 20 A Ch-2 - 0.0058 0.0070 Forward Transconductance b gfs VDS = 15 V, ID = 15.6 A Ch-1 - 37 - S VDS = 15 V, ID = 20 A Ch-2 - 60 - Dynamica Input Capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS =15 V, VGS = 0 V, f = 1 MHz Ch-1 - 760 - pF Ch-2 - 1552 - Output Capacitance Coss Ch-1 - 250 - Ch-2 - 450 - Reverse Transfer Capacitance Crss Ch-1 - 32 - Ch-2 - 40 - Crss / Ciss Ratio Ch-1 0.042 - 0.084 - Ch-2 0.025 - 0.050 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 15.6 A Ch-1 - 12.3 19 nC VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 - 22.6 35 Channel-1 VDS = 15 V,VGS = 4.5 V, ID = 15.6 A Channel-2 VDS = 15 V,VGS = 4.5 V, ID = 20 A Ch-1 - 5.6 9 Ch-2 - 10.1 16 Gate-Source Charge Qgs Ch-1 - 2.3 - Ch-2 - 4.2 - Gate-Drain Charge Qgd Ch-1 - 1 - Ch-2 - 1.8 - Output Charge Qoss Ch-1 - 6.6 - Ch-2 - 12.4 - Gate Resistance Rg f = 1 MHz Ch-1 0.3 1.7 3.4 Ω Ch-2 0.3 1.3 2.6 |
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