SIZ340DT datasheet(2/14 Pages) TFUNK

Part #	SIZ340DT

Description	Dual N-Channel 30 V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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SiZ340DT

www.vishay.com

Vishay Siliconix

S14-0611-Rev. B, 24-Mar-14

2

Document Number: 62877

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Channel-1

Channel-2

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambient a,b

t

≤ 10 s

RthJA

27

34

24

30

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

67.5

3.24

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

TEST CONDITIONS

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

Ch-1

30

-

V

Ch-2

30

-

VDS Temperature Coefficient

ΔVDS/TJ

ID = 250 μA

Ch-1

-

18.4

-

mV/°C

Ch-2

-

30

-

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

ID = 250 μA

Ch-1

-

-4.3

-

Ch-2

-

-5

-

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

Ch-1

1

-

2.4

V

Ch-2

1

-

2.4

Gate Source Leakage

IGSS

VDS =0 V, VGS = +20 V, -16 V

Ch-1

-

± 100

nA

Ch-2

-

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Ch-1

-

1

μA

Ch-2

-

1

VDS = 30 V, VGS =0 V, TJ = 55 °C

Ch-1

-

5

Ch-2

-

5

On-State Drain Current b

ID(on)

VDS

≥ 5 V,VGS = 10 V

Ch-1

10

-

A

Ch-2

10

-

Drain-Source On-State Resistance b

RDS(on)

VGS = 10 V, ID = 15.6 A

Ch-1

-

0.0079 0.0095

Ω

VGS = 10 V, ID = 20 A

Ch-2

-

0.0042 0.0051

VGS = 4.5 V, ID = 13 A

Ch-1

-

0.0110 0.0137

VGS = 4.5 V, ID = 20 A

Ch-2

-

0.0058 0.0070

Forward Transconductance b

gfs

VDS = 15 V, ID = 15.6 A

Ch-1

-

37

-

S

VDS = 15 V, ID = 20 A

Ch-2

-

60

-

Dynamica

Input Capacitance

Ciss

Channel-1

VDS = 15 V, VGS = 0 V, f = 1 MHz

Channel-2

VDS =15 V, VGS = 0 V, f = 1 MHz

Ch-1

-

760

-

pF

Ch-2

-

1552

-

Output Capacitance

Coss

Ch-1

-

250

-

Ch-2

-

450

-

Reverse Transfer Capacitance

Crss

Ch-1

-

32

-

Ch-2

-

40

-

Crss / Ciss Ratio

Ch-1

0.042

-

0.084

-

Ch-2

0.025

-

0.050

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 15.6 A

Ch-1

-

12.3

19

nC

VDS = 15 V, VGS = 10 V, ID = 20 A

Ch-2

-

22.6

35

Channel-1

VDS = 15 V,VGS = 4.5 V, ID = 15.6 A

Channel-2

VDS = 15 V,VGS = 4.5 V, ID = 20 A

Ch-1

-

5.6

9

Ch-2

-

10.1

16

Gate-Source Charge

Qgs

Ch-1

-

2.3

-

Ch-2

-

4.2

-

Gate-Drain Charge

Qgd

Ch-1

-

1

-

Ch-2

-

1.8

-

Output Charge

Qoss

Ch-1

-

6.6

-

Ch-2

-

12.4

-

Gate Resistance

Rg

f = 1 MHz

Ch-1

0.3

1.7

3.4

Ω

Ch-2

0.3

1.3

2.6

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