SISA12ADN datasheet(3/13 Pages) TFUNK

Part #	SISA12ADN

Description	N-Channel 30 V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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Document Number: 63234

S13-0113-Rev. A, 21-Jan-13

www.vishay.com

3

Vishay Siliconix

SiSA12ADN

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 4 V

V

GS = 3 V

0.002

0.003

0.004

0.005

0.006

0

10

20

30

40

50

60

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

6

12

18

24

30

Q

g - Total Gate Charge (nC)

V

DS = 24 V

V

DS = 15 V

V

DS = 7.5 V

I

D = 10 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

0

400

800

1200

1600

2000

2400

0

5

10

15

20

25

30

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

V

GS = 4.5 V

I

D = 10 A

V

GS = 10 V

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