IKW30N60T_15 datasheet(6/13 Pages) INFINEON

Part #	IKW30N60T

Description	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKW30N60T

TRENCHSTOP

™ Series

q

IFAG IPC TD VLS

6

Rev. 2.6 19.05.2015

0A

10A

20A

30A

1ns

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)









10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, rG = 10Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 30A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C

100°C 125°C 150°C

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

-50°C

0°C

50°C

100°C

150°C

0V

1V

2V

3V

4V

5V

6V

7V

m in.

typ.

m ax.

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 30A, rG=10Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as

a function of junction

temperature

(IC = 0.43mA)

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IKW30N60T Datasheet(PDF) 6 Page - Infineon Technologies AG

IKW30N60T Datasheet(HTML) 6 Page - Infineon Technologies AG

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