IKP10N60T_15 datasheet(8/13 Pages) INFINEON

Part #	IKP10N60T

Description	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKP10N60T

TRENCHSTOP

™ Series

p

IFAG IPC TD VLS

8

Rev. 2.6 11.05.2015

0nC

20nC

40nC

60nC

0V

5V

10V

15V

480V

120V

0V

10V

20V

10pF

100pF

1nF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC=10 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

12V

14V

16V

18V

0A

25A

50A

75A

100A

125A

150A

10V

11V

12V

13V

14V

0µs

2µs

4µs

6µs

8µs

10µs

12µs

VGE, GATE-EMITTETR VOLTAGE

VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE  400V, Tj  150C)

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C,

TJmax<150°C)

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IKP10N60T Datasheet(PDF) 8 Page - Infineon Technologies AG

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