IKD10N60R datasheet(4/16 Pages) INFINEON

Part #	IKD10N60R

Description	IGBT with integrated diode in packages offering space saving advantage

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKD10N60R

TRENCHSTOPTMRC-Seriesforhardswitchingapplications

Rev.2.5,2014-03-12

Maximumratings

Parameter

Symbol

Value

Unit

Collector-emittervoltage,Tvj

≥25°C

VCE

600

V

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IC

20.0

10.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax

ICpuls

30.0

A

Turn off safe operating area

VCE

≤600V,Tvj≤175°C,tp=1µs

-

30.0

A

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IF

20.0

10.0

A

Diodepulsedcurrent,tplimitedbyTvjmax

IFpuls

30.0

A

Gate-emitter voltage

VGE

±20

V

Short circuit withstand time

VGE=15.0V,VCC

≤400V

Allowed number of short circuits < 1000

Time between short circuits:

≥ 1.0s

Tvj=150°C

tSC

5

µs

PowerdissipationTC=25°C

Ptot

150.0

W

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

reflow soldering (MSL1 according to JEDEC J-STA-020)

260

°C

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,

1)

junction - case

Rth(j-c)

1.00

K/W

Diode thermal resistance,

2)

junction - case

Rth(j-c)

2.60

K/W

Thermal resistance, min. footprint

junction - ambient

Rth(j-a)

75

K/W

Thermal resistance, 6cm² Cu on

PCB

junction - ambient

Rth(j-a)

50

K/W

1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.

2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.

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