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HWS505_V2 Datasheet(PDF) 2 Page - Hexawave, Inc |
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HWS505_V2 Datasheet(HTML) 2 Page - Hexawave, Inc |
2 / 2 page HWS505 GaAs 1-6 GHz SPDT Switch May 2011 V2 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw All specifications are subject to change without notice. Typical Performance Data with 8pF Capacitors @ +25°C Insertion loss vs. Frequency -0.6 -0.5 -0.4 -0.3 -0.2 2 2.5 3 3.5 4 4.5 5 5.5 6 Frequency (GHz) Isolation vs. Frequency -35 -30 -25 -20 -15 2 2.5 3 3.5 4 4.5 5 5.5 6 Frequency (GHz) Input return loss vs. Frequency -30 -25 -20 -15 -10 2 2.5 3 3.5 4 4.5 5 5.5 6 Frequency (GHz) Absolute Maximum Ratings Parameter Absolute Maximum RF Input Power +32 dBm @ +3V Control Voltage +6V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Electrostatic Discharge Machine Model Class M1 Pin Out (Top View) GND RF2 3 2 1 5 6 RFC 4 RF1 VC1 VC2 CB CB CB Note: 1. DC blocking capacitors CB=8pF are required on all RF ports. 2. Exposed pad in the bottom must be connected to ground by via holes. Logic Table for Switch On-Path VC1 VC2 RFC-RF1 RFC-RF2 1 0 On Off 0 1 Off On ‘1’ = +2.7V to +5V ‘0’ = 0V to +0.2V |
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