SI4778DY datasheet(1/10 Pages) TFUNK

Part #	SI4778DY

Description	N-Channel 25-V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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Vishay Siliconix

Si4778DY

Document Number: 69817

S09-0394-Rev. B, 09-Mar-09

www.vishay.com

1

N-Channel 25-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

APPLICATIONS

•

DC/DC Converter

•Gaming

• Notebook System Power

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

Qg (Typ.)

25

0.023 at VGS = 10 V

8a

5.5 nC

0.028 at VGS = 4.5 V

8a

N-Channel MOSFET

G

D

S

D

S

D

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4778DY-T1-E3 (Lead (Pb)-free)

Si4778DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

Notes:

a. Package Limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

25

V

Gate-Source Voltage

VGS

± 16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

8a

A

TC = 70 °C

8a

TA = 25 °C

8a, b, c

TA = 70 °C

6.4b, c

Pulsed Drain Current

IDM

30

Continuous Source-Drain Diode Current

TC = 25 °C

IS

4.2

TA = 25 °C

2b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

5

Single Pulse Avalanche Energy

EAS

1.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

5

W

TC = 70 °C

3.2

TA = 25 °C

2.4b, c

TA = 70 °C

1.5b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

42

53

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

19

25

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