SIGC20T120E datasheet(2/5 Pages) INFINEON

Part #	SIGC20T120E

Description	positive temperature coefficient

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Manufacturer	INFINEON [Infineon Technologies AG]

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SIGC20T120E

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7631M, L7631T, L7631E, Rev 2.3, 27.06.2014

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter voltage, Tvj =25 C

VCE

1200

V

DC collector current, limited by Tvj max

I C

1 )

A

Pulsed collector current, tp limited by Tvj max

I c, p ul s

45

A

Gate emitter voltage

VGE

20

V

Junction temperature range

T vj

-40 ... +175

°C

Operating junction temperature

T vj

-40...+150

C

Short circuit data

2 ) V

GE = 15V, VCC = 900V, Tvj = 150°C

t SC

10

µs

Reverse bias safe operating area

2 ) (RBSOA)

I C, ma x = 30A, V CE, ma x = 1200V

Tvj  150 °C

1 ) depending on thermal properties of assembly

2 ) not subject to production test - verified by design/characterization

Static Characteristics (tested on wafer), Tvj =25 C

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

Collector-Emitter breakdown voltage

V(BR)CES

VGE=0V , IC= 0.5 mA

1200

V

Collector-Emitter saturation voltage

VCEsat

VGE=15V, IC=15A

1.4

1.7

2.1

Gate-Emitter threshold voltage

VGE(th)

IC=600µA , VGE=VCE

5.0

5.8

6.5

Zero gate voltage collector current

ICES

VCE=1200V , VGE=0V

2.16

µA

Gate-Emitter leakage current

IGES

VCE=0V , VGE=20V

120

nA

Integrated gate resistor

rG

--



Dynamic Characteristics (not subject to production test - verified by design / characterization),

Tvj =25 C

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

Input capacitance

C i es

VCE = 25 V ,

V GE = 0V ,

f = 1 M H z

1090

pF

Output capacitance

C oe s

58

Reverse transfer capacitance

C re s

48

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