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ER1004G-TF32-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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ER1004G-TF32-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page ER1004 Preliminary DIODE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R201-099.a ABSOLUTE MAXIMUM RATINGS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT Recurrent Peak Reverse Voltage VRRM 400 V RMS Voltage VRMS 280 V Average Average Forward Current at TC=100°C IO 10 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 150 A Operating Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS (PER LEG) PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 5 °C/W ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20% PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Forward Voltage Drop VF IF=10A 1.3 V TJ=25°C 10 μA DC Reverse Current at Rated DC Blocking Voltage IR TJ=100°C 500 μA Reverse Recovery Time (Note 2) trr 50 ns Junction Capacitance (Note 1) CJ 62 pF Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A. |
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