IPD096N08N3G_14 datasheet(3/9 Pages) INFINEON

Part #	IPD096N08N3G

Description	Ideal for high frequency switching

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD096N08N3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

1810

2410

pF

Output capacitance

C oss

-

490

652

Reverse transfer capacitance

C rss

-

20

-

Turn-on delay time

t d(on)

-

13

-

ns

Rise time

t r

-

30

-

Turn-off delay time

t d(off)

-

23

-

Fall time

t f

-

5

-

Gate Charge Characteristics

5)

Gate to source charge

Q gs

-

9

-

nC

Gate to drain charge

Q gd

-

5

-

Switching charge

Q sw

-

10

-

Gate charge total

Q g

-

26

35

Gate plateau voltage

V plateau

-

5.2

-

V

Output charge

Q oss

V DD=40 V, V GS=0 V

-

35

47

nC

Reverse Diode

Diode continous forward current

I S

-

74

A

Diode pulse current

I S,pulse

-

296

Diode forward voltage

V SD

V GS=0 V, I F=46 A,

T j=25 °C

-

1.0

1.2

V

Reverse recovery time

t rr

-

57

-

ns

Reverse recovery charge

Q rr

-

91

-

nC

5) See figure 16 for gate charge parameter definition

V R=40 V, I F=40A,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=40 V,

f =1 MHz

V DD=40 V, V GS=10 V,

I D=40 A, R G,ext=1.6 W

V DD=40 V, I D=46 A,

V GS=0 to 10 V

Rev. 2.2

page 3

2014-05-19

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