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IPB12CN10NG Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPB12CN10NG Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 12 page IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 3250 4320 pF Output capacitance C oss - 489 650 Reverse transfer capacitance C rss - 29 44 Turn-on delay time t d(on) - 17 26 ns Rise time t r - 21 32 Turn-off delay time t d(off) - 32 48 Fall time t f - 8 12 Gate Charge Characteristics 5) Gate to source charge Q gs - 18 24 nC Gate to drain charge Q gd - 12 18 Switching charge Q sw - 20 29 Gate charge total Q g - 49 65 Gate plateau voltage V plateau - 5.5 - V Output charge Q oss V DD=50 V, V GS=0 V - 52 69 nC Reverse Diode Diode continous forward current I S - - 67 A Diode pulse current I S,pulse - - 268 Diode forward voltage V SD V GS=0 V, I F=67 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 105 ns Reverse recovery charge Q rr - 255 - nC 5) See figure 16 for gate charge parameter definition V R=50 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=33.5 A, R G,ext=1.6 W V DD=50 V, I D=67 A, V GS=0 to 10 V Rev. 1.08 page 3 2013-07-09 |
Similar Part No. - IPB12CN10NG_13 |
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Similar Description - IPB12CN10NG_13 |
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