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IKP30N65F5 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part No. IKP30N65F5
Description  IGBT copacked with RAPID 1 fast and soft antiparallel diode
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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IKP30N65F5 Datasheet(HTML) 5 Page - Infineon Technologies AG

 
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5
IKP30N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.2,2014-12-04
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
StaticCharacteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V,IC=0.20mA
650
-
-
V
Collector-emitter saturation voltage
VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.60
1.80
1.90
2.10
-
-
V
Diode forward voltage
VF
VGE=0V,IF=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.35
1.30
1.30
1.80
-
-
V
Gate-emitter threshold voltage
VGE(th)
IC=0.30mA,VCE=VGE
3.2
4.0
4.8
V
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
40.0
4000.0
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=30.0A
-
38.0
-
S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
DynamicCharacteristic
Input capacitance
Cies
-
1800
-
Output capacitance
Coes
-
45
-
Reverse transfer capacitance
Cres
-
9
-
VCE=25V,VGE=0V,f=1MHz
pF
Gate charge
QG
VCC=520V,IC=30.0A,
VGE=15V
-
65.0
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
-
7.0
-
nH
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
-
19
-
ns
Rise time
tr
-
9
-
ns
Turn-off delay time
td(off)
-
170
-
ns
Fall time
tf
-
10
-
ns
Turn-on energy
Eon
-
0.28
-
mJ
Turn-off energy
Eoff
-
0.07
-
mJ
Total switching energy
Ets
-
0.35
-
mJ
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=23.0
Ω,RG(off)=23.0Ω,
L
σ=30nH,Cσ=30pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.


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