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IKP30N65F5 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part No. IKP30N65F5
Description  IGBT copacked with RAPID 1 fast and soft antiparallel diode
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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IKP30N65F5 Datasheet(HTML) 4 Page - Infineon Technologies AG

 
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4
IKP30N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.2,2014-12-04
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj
≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
55.0
35.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
90.0
A
Turn off safe operating area
VCE
≤650V,Tvj≤175°C,tp=1µs
-
90.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
36.0
21.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
90.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp
≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
188.0
93.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Symbol Conditions
Max.Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
0.80
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
1.80
K/W
Thermal resistance
junction - ambient
Rth(j-a)
62
K/W


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